Growing semiconductor crystals one layer of atoms at a time
Zone C: Tempe campus
Join ASU Molecular Beam Epitaxy group researchers as they demonstrate growth of semiconductor crystals for use in next generation solar cells. Molecular beam epitaxy is a cutting-edge ultra-high-vacuum technique for growing high purity crystalline material by depositing atoms one layer at a time. You’ll get a first-hand look at semiconductor growth in real time, as well as learn about the fundamentals of semiconductor materials for every day optical devices like LEDs, solar cells, detectors, and lasers.